Atomic Layer Deposition Systems

Atomic Layer Deposition Systems

Basic ALD technology concept is to deposit one atomic layer per cycle during deposition. ALD is a surface controlled layer-by-layer process for the deposition of thin films with atomic layer accuracy which is basic fundamentals of nano-technology.


  • Material:Stainless steel
  • Vacuum: =10-3 Torr
  • Wafer size up to 300mm
  • Excellent program control and intrinsic cycle time < 1 sec
  • Excellent film quality and uniformity
  • Wafer stage temperature 400 ?
  • Five precursor modules and two process gases
Atomic Layer Deposition Systems


  • High-K gate Oxides
  • Coating of nano-Porous Structures
  • Storage capacitor dielectrics
  • Diffusion Barrier, seed for copper metallization and passivation layers
  • Blocking layers for moisture and gas-impermeable structures.

© 2014 Scientific & Analytical Instruments Designed by Goya