Atomic Layer Deposition Systems
Basic ALD technology concept is to deposit one atomic layer per cycle during deposition. ALD is a surface controlled layer-by-layer process for the deposition of thin films with atomic layer accuracy which is basic fundamentals of nano-technology.
Features
- Material:Stainless steel
- Vacuum: =10-3 Torr
- Wafer size up to 300mm
- Excellent program control and intrinsic cycle time < 1 sec
- Excellent film quality and uniformity
- Wafer stage temperature 400 ?
- Five precursor modules and two process gases
Applications
- High-K gate Oxides
- Coating of nano-Porous Structures
- Storage capacitor dielectrics
- Diffusion Barrier, seed for copper metallization and passivation layers
- Blocking layers for moisture and gas-impermeable structures.